第27讲半导体èƒ&frac12

第27讲半导体èƒ&frac12

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Unformatted text preview: 194 1930 1947 (W. Shockley) (J. Bardeen) (W. H. Brattain) 50 80 1990 0.3 µ m CMOS 10 20 mm 2 1.4 70 /mm 2 1 µ m 0.8 µ m 0.6 µ m 0.25 µ m 0.1 µ m 1956 E g ħ ω ħ ω E g (7-1) 2 g c E π λ ≥ = (7-2) λ (7-2) 2 g c E π λ = = (7-3) k 195 7-1( a ) k k’ = = = k k k ' − = photon (7-4) 10 4 cm − 1 2 π / 10 8 cm − 1 k’ k (7-5) E ( k ) k 7-1( b ) ± (7-6) k B (7-7) − = ± = = = k' k q (7-8) ħ q − = ± = = = k' k q k k 7-1 ( d ) 7-1 ( i d ) ( ) K E g eV ( ) K E g 300 eV ( ) K E g eV ( ) E K g 300 eV i 5.4 HgTe 1) d -0.30 Si i 1.17 1.14 PbS d 0.286 0.34-0.37 Ge i 0.744 0.67 PbTe d 0.190 0.30 α− Sn d 0.00 0.00 CdS d 2.582 2.42 InSb d 0.24 0.18 CdSe d 1.840 1.74 InAs d 0.43 0.35 CdTe d 1.607 1.45 InP d 1.42 1.35 ZnO 3.436 3.2 GaP i 2.32 2.26 ZnS 3.91 3.6 GaAs d 0.81 0.78 SnTe d 0.3 0.18 AlSb i 1.65 1.52 AgCl 3.2 SiC ( ) 3.0 AgI 2.8 Te d 0.33 Cu 2 O 2.172 ZnSb 0.56 0.56 TiO 2 3.03 1) HgTe GaAs, InSb α− Sn HgTe 196 k E ( k ) ( ) ( ) ( ) ( ) ( ) 2 2 2 2 2 2 2 2 2 y y x...
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This note was uploaded on 05/05/2010 for the course PHYSICS 111 taught by Professor Zhengxiang during the Spring '08 term at Peking Uni..

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第27讲半导体èƒ&frac12

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