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09F-quiz-2-sol

09F-quiz-2-sol - ECE65(Fall 2009 Quiz 2 Notes 1 Write your...

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ECE65 (Fall 2009), Quiz 2 Notes: 1. Write your answers on these three sheets. 2. For each problem, 20% of points are alloacted for the correct ±nal answer. Problem 1. Consider NMOS circuit below with K = 0 . 4 mA/V 2 , V t = 2 V, R D = 1 KΩ and V DD = 12 V. Find v o when v i = 0 and 6 V . (6pt) i D D S G v i v o DD V D R GS-KVL: v GS = v i DS-KVL: V DD = R D i D + v DS A) v i = 0 V. From GS-KVL, we get v GS = v i = 0. As v GS < V t = 2 V, NMOS is in cut-o², i D = 0, and v DS is found from DS-KVL: DS-KVL: v o = v DS = V DD R D i D = 12 V B) v i = 6 V. From GS-KVL, we get v GS = 6 V. Since v GS > V t , NMOS is not in cut-o². Assume NMOS in saturation, then: i D = K ( v GS V t ) 2 = 0 . 4 × 10 - 3 (6 2) 2 = 6 . 4 mA DS-KVL: v DS = V DD R D i D = 12 6 . 4 × 10 - 3 × 1 × 10 3 = 5 . 6 V Since v DS = 5 . 6 > v GS V t = 6 2 = 4, NMOS is in saturation. Therefore, v o = v DS = 5 . 8 V.

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Problem 2. Find I in the circuit below with Si diodes(10 pts). V
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09F-quiz-2-sol - ECE65(Fall 2009 Quiz 2 Notes 1 Write your...

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