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F2009-EEE3308C-Midterm-Exam-SolW

# F2009-EEE3308C-Midterm-Exam-SolW - EEL 3308C Midterm Exam...

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Unformatted text preview: EEL 3308C Midterm Exam Name: 30 /u Ham 5 UF ID: Problem 1 25 pts. Problem 2 25 pts. Problem 3 25 pts. Problem 4 25 pts. Total : Honor Code: We, the members of the University of Florida community, pledge to hold ourselves and our peers to the highest standards of honesty and integrity. Signature Note: Please show work. Answers without analysis will not receive credit. F2009 1 Problem 1 (25pts): Consider the following circuit. Find an expression for V0 in terms of inputs V1 and V2 (Hint: use superposition to ﬁnd the output voltage V0). F2009 2 Problem 2 (25pts): Consider the circuit below. Let transistors Q1 and Q2 have VT=1V, kn’=2mA/V2, 7t=0, Wl/L=1 and Wz/L=10. Pd n v L ' (a) in v0 age DSl acrOSSQ \/GSI : V65) _) 5a+ara +70" 0 /Kn WI (i/6\$_ W) VDD=10V 10 R l1mA M4 “(0) Mum: -1 v) V65): m '02 ID1 + 02 Q1 + V032 V031 WzlL=10 W1IL=1 (b) What is the value of drain current 1132 if Q2 is in saturation? Does 192 depend on R? "— I ‘ M A 443:4 Kn 1: (Vac-VT} V65 1 = VGSI = a V Laz/ J(°}””4 ’6’W Lg: /Om/4 (c) Find the maximum value for R so that Q2 operates in the saturation region. So: 4mm Mn V052 V<ss“\/T Von->- 3 ‘ l : 1 V VDMlA/zlv ‘ \/DA: 109’ Q VDD.‘ V w 2:; Dan It); [Owlv : f lOmA r—‘————/ Problem 3 (25pts): Consider the following circuit. The parameters for the diodes are VT=25mV and n=2 (assume a piece-wise linear diode model with vD0=0.65V). (a) Draw the small signal model for the following circuit. VDD |B R516 Rsig=100Q Cc1 =°° C02 :00 \/ I + Vs; I? VSig R=5OQ 3 v0 2' CI ' O J. (b) At what value of IE is the output v0 = 0.5 - ing ? Determine the corresponding voltage VD. P 4 c) rd n 1/T an}. Sm” I...” M04” _ .__________z . =. " . 5 5(7) V0 .. R+AQ+P\$7 V95 0. b V513 Where 6 Id 50+aw ' 5mm +100 :0-5 VD:IB(IQ+JG)+QVDD an , Q=<>5=f :amﬁsma-as) +£10.45 “r : LV:_ (mmsmv) _.a V3 ‘ (35 [ Vo=l.5l/’ Ig’Am/l (c) How does the value of the dc current 13 change the transfer function vo/vsig? Describe in one sentence the purpose of the above circuit. \/ O ,4; I5 :‘ncrease5,7; clecfcmes This IS a Curr€n+ com‘ro//CJ Vo/taﬂe o/v'w'cler F2009 . 4 Problem 4 (25pts): The parameters for the MOS transistor are: VTN= 1V, kn= 25 mA/VZ, and A: 0 V. 1 \—a 10V 10V (a) Determine node voltages Vg, VD, Vs and Vx. W~=loV< :>:§V (*“G‘L : —‘ 3‘ 'gMA 3k" (Vé'S—t) :9 Vos’WJFVT 3 LM/ V5: Vy“\/o- :3~QV VX: |/S - 1025 : 333V— ,SMAgoox) : 3-7V VD: IOV' I050 3 [O (/r a. St/ : 7,s:/ (b) Draw the small signal model and ﬁnd the small signal parameters gm and r0. “7 5mrm:sﬂlgb (<54; I 5: 5 Fr“: DAID‘” v F2009 5 (c) Find the input resistance Rm and output resistance Rom. me (an, 2 mm: 0.5m l «,7 Our : MHEJRMQ: {1195‘ 12 (d) Find the overall gain Gv=vo/Vsig (express the answer in WV and in dB). z. 15 L] AV SMRD _: W : DUSV/V i+| F2009 ...
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F2009-EEE3308C-Midterm-Exam-SolW - EEL 3308C Midterm Exam...

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