This preview shows pages 1–3. Sign up to view the full content.
This preview has intentionally blurred sections. Sign up to view the full version.View Full Document
Unformatted text preview: ~ 'o~ ,1. ,,~tl A' ECE 3040 Microelectronic Circuits Exam 1 September 23, 2009 Dr. W. Alan Doolittle Print your name clearly and largely: Instructions: Read all the problems carefully and thoroughly before you begin working. You are allowed to use 1 sheet ofnotes (1 page front and back) as well as a calculator. There are 100 total points. Observe the point value of each problem and allocate your time accordingly. SHOW ALL WORK AND CIRCLE YOUR FINAL ANSWER WITH THE PROPER UNITS INDICATED. Write legibly. If! cannot read it, it will be considered a wrong answer. Do all work on the paper provided. Tum in all scratch paper, even if it did not lead to an answer. Report any and all ethics violations to the instructor. Good luck! Sign your name on ONE ofthe two following cases: I DID NOT observe any ethical violations during this exam: I observed an ethical violation during this exam: First 33% Multiple Choice and TrueIFalse (Circle the letter of the most correct answer or answers) 3.) (3-points True r False: f(E=Er) is the fermi distribution function evaluated at the Fermi energy. 1.) (3-points) True 0 False: ue to their completely disordered arrangement of atoms, amorphous materials are only for things like insulators and are never used for semiconductor devices. 2.) (3-points) True 0 alse: Atoms with large chemical bond strengths usually result in small energyb~ It indicates at at all temperatures greater than 0 Kelvin, an equal likelihood of having filled and empty states provided there are actually states at that energy. 4.) (3-points) True o~~ Ino.33Gao.44No.23 is a valid semiconductor formula in standard semiconductor nota Ion. 5.) (3-points)(f~)f False: The law of mass action describes the interplay of electrons being created a~~pense of holes (and vise versa) but is only valid in equilibrium. 6.) (3-points Tru r False: The density of states predicts more states at energies far away from the energy ba~ap edge (E=Eg)....
View Full Document
This note was uploaded on 05/26/2010 for the course ECE 3025 taught by Professor Citrin during the Spring '08 term at Georgia Institute of Technology.
- Spring '08