Lecture_20

Lecture_20 - 1 Prof. J. S. Harris 1 EE243. Semiconductor...

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Unformatted text preview: 1 Prof. J. S. Harris 1 EE243. Semiconductor Optoelectronic Devices (Winter 2010) 9. Semiconductor lasers Conditions Necessary for Stimulated Emission Gain Phase Match Threshold Current Optical ConFnement & Coupling to EM ¡ield Vertical Cavity Surface Emitting Lasers (VCSEL) Single ¡requency Lasers Laser Gain Dynamics Modulation Bandwidth Integrated Photonic Circuits VCSEL/Detector--micro¢uroimeter (μTAS) Prof. J. S. Harris 2 EE243. Semiconductor Optoelectronic Devices (Winter 2010) Pizza Lunch for all “Survivors” CISX-Patio Friday 11:45 March 11 Final Exam Wednesday, March 17 7-10 PM Room 380X Please go to AXESS for online course evaluation 2 Prof. J. S. Harris 3 EE243. Semiconductor Optoelectronic Devices (Winter 2010) ● InP/InGaAsP on InP has been the backbone technology for the past 30 years ● GaAs/AlAs/GaInNAs on GaAs offers new potential Important Fber wavelengths 0.5 1 1.5 2 2.5 5.4 5.5 5.6 5.7 5.8 5.9 6 6.1 6.2 Bandgap (eV) GaN y As 1-y InN y As 1-y In x Ga 1-x As 980nm 1300nm 1550nm Ga x In 1-x N y As 1-y on GaAs AlAs InAs In x Al 1-x As Al x Ga 1-x As InP GaAs Lattice Parameter (Å) In x Ga 1-x As y P 1-y Material Choices for 1.3-1.6 μm Lasers Prof. J. S. Harris 4 EE243. Semiconductor Optoelectronic Devices (Winter 2010) GaInNAsSb/GaNAsSb: Long Wavelength PL 0.75 0.80 0.85 0.90 0.95 1.00 10-3 10-2 10-1 10 1600 1500 1400 1300 1200 35% In GaInNAs 31% In GaInNAs 38% In Sb: 7.2e-8 torr GaInNAsSb 38% In Sb: 1.4e-7 torr GaInNAsSb 39% In Sb: 1.2e-7 torr GaInNAsSb Intensity (a.u.) Energy(eV) Wavelength (nm) Sb Extends Wavelength of GaInNAs • Allows increased In content • Reduction of E g with Sb in alloy • May increase N incorporation GaInNAsSb GaNAs GaNAs GaAs GaAs 20nm 7nm 20nm Single QW structure 2 Prof. J. S. Harris 3 EE243. Semiconductor Optoelectronic Devices (Winter 2010) ● InP/InGaAsP on InP has been the backbone technology for the past 30 years ● GaAs/AlAs/GaInNAs on GaAs offers new potential Important Fber wavelengths 0.5 1 1.5 2 2.5 5.4 5.5 5.6 5.7 5.8 5.9 6 6.1 6.2 Bandgap (eV) GaN y As 1-y InN y As 1-y In x Ga 1-x As 980nm 1300nm 1550nm Ga x In 1-x N y As 1-y on GaAs AlAs InAs In x Al 1-x As Al x Ga 1-x As InP GaAs Lattice Parameter (Å) In x Ga 1-x As y P 1-y Material Choices for 1.3-1.6 μm Lasers Prof. J. S. Harris 4 EE243. Semiconductor Optoelectronic Devices (Winter 2010) GaInNAsSb/GaNAsSb: Long Wavelength PL 0.75 0.80 0.85 0.90 0.95 1.00 10-3 10-2 10-1 10 1600 1500 1400 1300 1200 35% In GaInNAs 31% In GaInNAs 38% In Sb: 7.2e-8 torr GaInNAsSb 38% In Sb: 1.4e-7 torr GaInNAsSb 39% In Sb: 1.2e-7 torr GaInNAsSb Intensity (a.u.) Energy(eV) Wavelength (nm) Sb Extends Wavelength of GaInNAs • Allows increased In content • Reduction of E g with Sb in alloy • May increase N incorporation GaInNAsSb GaNAs GaNAs GaAs GaAs 20nm 7nm 20nm Single QW structure 3 Prof. J. S. Harris 5 EE243. Semiconductor Optoelectronic Devices (Winter 2010) CW 1.55 μ m Lasers J th = 373 A/cm...
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This note was uploaded on 06/05/2010 for the course EE 243 taught by Professor Harris,j during the Winter '10 term at Stanford.

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Lecture_20 - 1 Prof. J. S. Harris 1 EE243. Semiconductor...

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