ina111 - INA1 11 INA111 INA1 11 High Speed FET-Input...

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© 1992 Burr-Brown Corporation PDS-1143E Printed in U.S.A. March, 1998 INA111 A 1 A 2 A 3 (12) (11) 6 (10) 10k 10k 25k 25k 10k 10k (13) 7 (7) 4 (5) 3 (15) 8 (2) 1 (4) 2 V IN V IN R G V+ V– INA111 DIP (SOIC) Ref Feedback V O G = 1 + 50k R G + 5 DIP Connected Internally High Speed FET-Input INSTRUMENTATION AMPLIFIER FEATURES FET INPUT: I B = 20pA max HIGH SPEED: T S = 4 μ s (G = 100, 0.01%) LOW OFFSET VOLTAGE: 500 μ V max LOW OFFSET VOLTAGE DRIFT: 5 μ V/ ° C max HIGH COMMON-MODE REJECTION: 106dB min 8-PIN PLASTIC DIP, SOL-16 SOIC APPLICATIONS MEDICAL INSTRUMENTATION DATA ACQUISITION DESCRIPTION The INA111 is a high speed, FET-input instrumenta- tion amplifier offering excellent performance. The INA111 uses a current-feedback topology provid- ing extended bandwidth (2MHz at G = 10) and fast settling time (4 μ s to 0.01% at G = 100). A single external resistor sets any gain from 1 to over 1000. Offset voltage and drift are laser trimmed for excellent DC accuracy. The INA111’s FET inputs reduce input bias current to under 20pA, simplifying input filtering and limiting circuitry. The INA111 is available in 8-pin plastic DIP, and SOL-16 surface-mount packages, specified for the –40 ° C to +85 ° C temperature range. ® International Airport Industrial Park Mailing Address: PO Box 11400, Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 Tel: (520) 746-1111 Twx: 910-952-1111 Internet: http://www.burr-brown.com/ FAXLine: (800) 548-6133 (US/Canada Only) Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132 SBOS015
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® INA111 2 SPECIFICATIONS ELECTRICAL At T A = +25 ° C, V S = ± 15V, R L = 2k , unless otherwise noted. Specification same as INA111BP. NOTE: (1) Temperature coefficient of the “50k ” term in the gain equation. The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems. INA111BP, BU INA111AP, AU PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS INPUT Offset Voltage, RTI Initial T A = +25 ° C ± 100 ± 500/G ± 500 ± 2000/G ± 200 ± 500/G ± 1000 ± 5000/G μ V vs Temperature T A = T MIN to T MAX ± 2 ± 10/G ± 5 ± 100/G ± 2 ± 20/G ± 10 ± 100/G μ V/ ° C vs Power Supply V S = ± 6V to ± 18V 2 +10/G 30 + 100/G ✻✻ μ V/V Impedance, Differential 10 12 || 6 || pF Common-Mode 10 12 || 3 || pF Input Common-Mode Range V DIFF = 0V ± 10 ± 12 V Common-Mode Rejection V CM = ± 10V, R S = 1k G = 1 80 90 75 dB G = 10 96 110 90 dB G = 100 106 115 100 dB G = 1000 106 115 100 dB BIAS CURRENT ± 2 ± 20 pA OFFSET CURRENT ± 0.1 ± 10 pA NOISE VOLTAGE, RTI G = 1000, R S = 0 f = 100Hz 13 nV/ Hz f = 1kHz 10 nV/ Hz f = 10kHz 10 nV/ Hz f B = 0.1Hz to 10Hz 1 μ Vp-p
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This note was uploaded on 06/17/2010 for the course ECE 500 taught by Professor Ma during the Spring '10 term at Abraham Baldwin Agricultural College.

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ina111 - INA1 11 INA111 INA1 11 High Speed FET-Input...

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