ECE474S09_Lecture27 - ECE 474: Principles of Electronic...

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ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Michigan State University ayresv@msu.edu
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Lecture 27: Chp. 04: Current State-of-Art Transistors Photo-generated carriers Diffusion Examples Energy landscapes
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Example 01
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Energy picture: individually: E F E i E V E C E gap = 1.1 eV E F E i E V E C E gap = 1.1 eV 0.407 eV 0.2 eV n 0 = 10 17 cm -3 n 0 = 10 13 cm -3
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Energy picture: individually: E F E i E V E C E gap = 1.1 eV E F E i E V E C E gap = 1.1 eV 0.407 eV 0.2 eV n 0 = 10 17 cm -3 n 0 = 10 13 cm -3 Picture of n-type or p-type?
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Energy picture: individually: E F E i E V E C E gap = 1.1 eV E F E i E V E C E gap = 1.1 eV 0.407 eV 0.2 eV n 0 = 10 17 cm -3 n 0 = 10 13 cm -3 n-type: example, Phosphorous dopant
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Line the Fermi energy levels up (Invariance of the Fermi levels = very important for nanotechnology): E F E i E V E C E gap = 1.1 eV E F E i E V E C E gap = 1.1 eV 0.407 eV 0.2 eV n 0 = 10 17 cm -3 n 0 = 10 13 cm -3
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Line the Fermi energy levels up (Invariance of the Fermi levels = very important for nanotechnology): E F E i E V E C E gap = 1.1 eV E F E i E V E C E gap = 1.1 eV 0.407 eV 0.2 eV n 0 = 10 17 cm -3 n 0 = 10 13 cm -3
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ECE474S09_Lecture27 - ECE 474: Principles of Electronic...

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