ECE474S09_Lecture39

# ECE474S09_Lecture39 - ECE 474 Principles of Electronic...

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ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Michigan State University [email protected]

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Lecture 39: Chp. 06: Current State-of-Art Transistors MOSFET Capacitances: high frequency I D -V DS curves
Lecture 39: Chp. 06: Current State-of-Art Transistors MOSFET Capacitances: high frequency I -V curves

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Find the threshold voltage for a real n-channel MOSFET built in a p-type Si block with Na = 10 16 cm -3 with a 20 nm gate oxide (SiO 2 ) The interface charge is given by 5 x 10 10 q C/cm -2 . The transistor will operate at room temperature. Sketch the C-V curve for this device sweeping V Gate = ± 3 V at 1 Hz and give important numbers to scale + - -0.98 V - (0.046 V) V T = V T = - 0.054 V
C (x 10 -7 F/cm 2 ) C-V curve for an n-channel in a p-type Si block Low frequency curve: 1 Hz ON OFF 1.73 2.0 1.0 0.29 0.5 0.0 -1.0 V T = - 0.054 V V FB = - 0.98V 1.08 0.5

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C-V curve for an n-channel in a p-type Si block Low frequency curve: 1 Hz: OFF to ON
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ECE474S09_Lecture39 - ECE 474 Principles of Electronic...

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