ECE474S09_Lecture40 - ECE 474: Principles of Electronic...

Info iconThis preview shows pages 1–12. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Michigan State University ayresv@msu.edu
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Lecture 40: Chp. 06: Current State-of-Art Transistors I D -V DS curves: Conductance and transconductance
Background image of page 2
MOSFET: I Drain to source n+ n+ +++ Vgate e- p V G ≥ V T creates an e- layer in the channel
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
MOSFET: I Drain to source n+ n+ +++ - V Drain to source + Vgate I DS e- p V DS makes the e-’s move: I DS
Background image of page 4
MOSFET: I Drain to source n+ n+ +++ - V Drain to source + Vgate I DS e- p Note the LHS and RHS pn junctions (actually n + p junctions) and how they are wired up. LHS: 0 to 0 V equilibrium depletion region. RHS: V DS to 0 V big reverse bias depletion region.
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
MOSFET: I Drain to source n+ n+ +++ - V Drain to source + Vgate I DS e- p Note the LHS and RHS pn junctions (actually n + p junctions) and how they are wired up. LHS: 0 to 0 V equilibrium depletion region. RHS: V DS to 0 V big reverse bias depletion region.
Background image of page 6
MOSFET: I Drain to source Vgate n+ n+ +++ - V Drain to source + Vgate saturation linear I DS p e- The pinch limits the amount of current that can get through = saturation.
Background image of page 7

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
MOSFET: I Drain to source 6.0 4.0 2.0 4.0 6.0 8.0 10.0 12.0 2.0 I DS (mA) V DS (V) Estimate the resistance R in the linear regime.
Background image of page 8
4.0 MOSFET: I Drain to source 6.0 2.0 4.0 6.0 8.0 10.0 12.0 2.0 I DS (mA) V DS (V) Estimate the resistance R in the linear regime. R = V/I = 2.0 V/4.0 mA = 0.5 k
Background image of page 9

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
4.0 MOSFET: I Drain to source 6.0 2.0 4.0 6.0 8.0 10.0 12.0 2.0 I DS (mA) V DS (V) Estimate the conductance g (often called G) in the linear regime.
Background image of page 10
MOSFET: I Drain to source 6.0 2.0 4.0 6.0 8.0 10.0 12.0 2.0 I DS (mA) V DS (V) Estimate the conductance g (often called G) in the linear regime. I = gV
Background image of page 11

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 12
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 06/26/2010 for the course ELECTRICAL ECE474 taught by Professor Tran-le,j during the Spring '10 term at Michigan State University.

Page1 / 52

ECE474S09_Lecture40 - ECE 474: Principles of Electronic...

This preview shows document pages 1 - 12. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online