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Exam02 Marked Charts & Formula Sheet_ECE474_S07

Exam02 Marked Charts & Formula Sheet_ECE474_S07 -...

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Unformatted text preview: WK) Figm’e $3? 500 ($00 300 250 Intrinsic carrier — concentration for Ge, Si, and GaAs a5 a function of in- verse i’emperature. The room temper- ature vaiues are ni(cm‘3) marked for reference. I ”:5 2"" W.« 35% we flaring-£3 m (I I‘ it a! Q {/5 Vi NJ ’a CM 2‘ .3 2 3 1014 1015 . 10 16 mi: 1017/: 10 18 10 19 1000/ T(K) *1 1014 10 15 1016 10 17 10 18 1019 impurity concentration (cm”3) figure 3-23 . fiariation o? mobility with total doping impurity concentration (Na + My) for Ge, SI, and GuAs cs? 300 E 3 E i i 3 § i z i 3 023 molecules/mole m‘P/mo (mimmn) 0.16, 0.49 0.04, 0.28 1.0 0.2, 0.63 0.15, 0.76 0.98 0.14, 0.79 0.074, 0.50 0.60 0.06, 0.23 0.089, 0.85 0.025, 0.41 0.015, 0.40 0.60 0.65 0.80 0.45 0.37 0.29 0.20 59 14,. 1% 103/010 16V) {cmg/V-s) [cmz/V—s) 1mm.) 51 11/01 1.11 1350 480 0.93, 0.19 Ge 11/01 0.67 3900 1900 1.64, 0.082 51c (1..) 11/144 2.86 500 4 0.6 AIP 11/21 2.45 80 _ 4 AlAs 11/2) 2.16 1200 420 20 A1813 11/21 1.6 200 300 0.12 ; GuP 11/21 2.26 300 150 1.12, 0.22 1 GuAs (4/21 1.43 8500 400 0.057 ' GoN [d/Z, W) 3.4 380 — 0.19 1 6051) (d/Z] 0.7 5000 1000 0.042 tnP (d/Z] 1 .35 4000 100 0.077 111A: (cl/Z1 0.35 22600 200 0.023 1051: (4/2) 0.1 a 10* 1700 0.014 zns (d/Z, W) 3.5 180 10 0.28 ZnSe (d/Z) 2 .7 1500 28 0.14 ZnTe (4/2) 2.25 530 100 0.18 CdS (d/W, a 2.42 250 15 0.21 ‘ CdSe [d/W} 1.73 800 — 0.13 1 CdTe (d/Z1 1.50 1050 100 0.10 T; PbS (i/H) 0.37 575 200 0.22 g PbSe (i/H) 0.27 1500 1500 — PbTe (i/H) 0.29 5000 I 4000 0.17 All values at 300 K. Avogadro’s number N = 6.02 X 1 Boltzmann’s constant Electronic charge (magnitude) Electronic rest moss Permittivify 01 lree space A k: 1.38 >< 10 23J/K = 8.62 X10 5eV/K q: 1.60X 101°C m0: 9.11X10 3' kg 60: 8.85X10"”F/cm = 8.85X1O"'2F/m Planck’s consiom Room tempera‘rure value ol- kT Speed of light 1Alongstrom1=10 8cm 1 0m (micron) = 10 4 cm 1nm=10131=107cm l 2.54 cm =1 in. '1 1eV=1.6><10"91 1 1 A wavelength k ol 1 0m corresponds to h= 6.63 X10 3‘va = 4.14 x 10 ‘5 eV<s kT= 0.0259 eV c= 2.998 X 10‘0 cm/s Prefixes: milli’, m- = 10 3 micro, pu- = 10 6 none, n- = 10 9 pico-, p— = 10' ‘2 kilo-, l<- = 103 mego-, M- = 106 gigo-, G- = 109 0 photon energy 01 1 .24 eV. 01211 5.43 5.65 3.08 5.46 5.66 6.14 5.45 5.65 4.5 6.09 5.87 6.06 6.48 5.409 5.071 6.101 4.137 4.30 0.482 5.930 6.147 6.452 Melting point 110 1415 936 2830 2000 1740 1080 1467 1238 2530 712 1070 943 525 1650' 1 100' 1238' 1475 1258 1098 1 1 19 1081 925 Density E, (9/003) 1 1.8 . 2.33 16 5.32 10.2 3.21 9.8 2.40 10.9 3.60 1 1 4.26 1 1.1 4.13 13.2 5.31 12.2 6.1 15.7 5.61 12.4 4.79 14.6 5.67 17.7 5.78 8.9 4.09 9.2 5.65 10.4 5.51 8.9 4.82 10.2 5.81 10.2 6.20 17.0 7.6 23.6 8.73 30 8.16 *Voporizes (Pm; (V) W Hall potentiak‘iég = {CD BZ RH/ t: Where RH = -= (qnoy1 DIR/RH = + (qp0)'ylfgdepending on which is the maéofifi cation WM “Mmmwmmw‘” f/MM WKR {3 f! ' m: )5 a" p’ ‘2'; i u ii“ A ,- {.9537 f 2“ ‘ :5; f g? 4‘3 f i; “P201 Mn {RH/P L “5%,! sz R: pL/wt = L/owt V =IR I = q (Concentration) (Area) (velocity) = total charge/time x 1M3“, {“me {ff , ‘LMW’ROKWKX 4”} I a ’ 4: is» 5} Lp : \j DP 1:19 and {"3“ Ln : \1 Dn Tn “j ”if if j x,“ “W“ ’“m—«Mmmo Diode Equation: I = qA{ Dlg Pn + Dn n \ (exp qV/kT _ 1) K Lp Ln ) V/kT -X /L Ip(Xn) = qA D9 pn (equ Lp N4; ,1 I” V/kT -X /L (1 mp): qA fl up («2qu KM Ln A IN ~ »— H ,_, ”MM/”I RAE-5 KR 5n : gopTHEAND 8p _ gOptp Mm“ ...
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