Exam1_sol - SO/H‘itLQMS m EE315 EXAM#1(closed books FALL...

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Unformatted text preview: SO/H‘itLQMS m EE315 EXAM#1 (closed books) FALL 2004 Problem 1 Given the circuit below, where VIN is a lkHz triangular wave with an amplitude of 10V. Sketch an approximate shape of VOUT for: a) RC<<T (period of the input signal) R b) RC>>T (period of the input signal) _,+l/ne capach‘ou has mmH/tallg no Problem 2 Given the v—i characteristics of a MOSFET. in, mAA TV‘IW’C—‘C” a) Find VTR and K from the figure 5V V11: N 2 ./ x — v @{mimi a LL=K[7f3-‘_3 1‘12) 5 10- 4V ~ L7~J1_01- i0 —IV‘1A/UZ (WhA- @\ A b) Show cutoff, constant current and triode regions in the figure VGS=2V VDs, V Problem 3 Given a CMOS inverter and v—i characteristics of the n- and p—channel MOSFETS. Sketch the load line (VDD—Vp) on the iDN—VDSN plot and obtain the transfer characteristic Vout(Vin). : _. : V ”V :- AP- —- - V Was/N g!“ VS!N a DD 5 3+2- A j..- Problem 4 Given a MOSFET inverter below (VDD=5V, V1=1V, RD=1kQ, K:lmA/V2, R=le, VTR=lV). Assuming that the MOSF ET is in the constant—current region (iD=K(VGS—VTR)2). a) Find an analytical expression for the output voltage as a function of VDD the input voltageV [(V- ). ou in —_ V 2 VB 21> K (1/9; T2)?- =VDD; Q1) :[(V"” —V,\ V2112 b) Find the inverter gain civout/dvin if vinév plum: 21,3- _(V,M-2)2] ~— ~2(v:m~2) MUM 01% C03 V»? 0114951.: 2 -26, 2) 1:3: dye/i Problem 5 Given a circuit below along with MOSFET’S V—i characteristics. Also shown are the load line formed by VDD and RD and the maximum power line (PM Ax=3mW). Find from the plot: VDD a) VDD :3 6 U bi; RD b) What value of Vin would make the + MOSFET dissipate 3mW. 4. VDS FH‘ polml‘ 4 +14% M09FET V111 i— 4/9S_ — I \ + S m W. _ _ 0i i SSIP“ ‘65 The 00We S Pomdlnfim in, mA V 6 PM” 90i+c —+0'90urcl? V0 49 0/35: Vim: 3V ...
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