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Unformatted text preview: SO/H‘itLQMS m EE315 EXAM#1 (closed books) FALL 2004 Problem 1 Given the circuit below, where VIN is a lkHz triangular wave with an amplitude of 10V. Sketch
an approximate shape of VOUT for: a) RC<<T (period of the input
signal) R b) RC>>T (period of the input
signal) _,+l/ne capach‘ou has
mmH/tallg no Problem 2 Given the v—i characteristics of a MOSFET. in, mAA TV‘IW’C—‘C” a) Find VTR and K from the ﬁgure 5V
V11: N 2
./ x — v
@{mimi a LL=K[7f3‘_3 1‘12) 5
10 4V ~ L7~J1_01 i0 —IV‘1A/UZ
(WhA @\ A b) Show cutoff, constant current and triode regions in the
ﬁgure
VGS=2V VDs, V Problem 3 Given a CMOS inverter and v—i characteristics of the n and p—channel MOSFETS. Sketch the
load line (VDD—Vp) on the iDN—VDSN plot and obtain the transfer characteristic Vout(Vin). : _. : V ”V : AP —  V
Was/N g!“ VS!N a DD 5 3+2 A j.. Problem 4 Given a MOSFET inverter below (VDD=5V, V1=1V, RD=1kQ, K:lmA/V2, R=le, VTR=lV).
Assuming that the MOSF ET is in the constant—current region (iD=K(VGS—VTR)2).
a) Find an analytical expression for the output voltage as a function of VDD the input voltageV [(V ).
ou in —_ V 2
VB 21> K (1/9; T2)? =VDD; Q1) :[(V"” —V,\ V2112 b) Find the inverter gain civout/dvin if vinév
plum: 21,3 _(V,M2)2] ~— ~2(v:m~2)
MUM 01%
C03 V»?
0114951.: 2 26, 2) 1:3:
dye/i Problem 5 Given a circuit below along with MOSFET’S V—i characteristics. Also shown are the load line
formed by VDD and RD and the maximum power line (PM Ax=3mW). Find from the plot: VDD
a) VDD :3 6 U
bi; RD
b) What value of Vin would make the
+ MOSFET dissipate 3mW.
4. VDS FH‘ polml‘ 4 +14% M09FET
V111 i— 4/9S_ — I \ + S m W.
_ _ 0i i SSIP“ ‘65
The 00We S Pomdlnﬁm
in, mA V 6
PM” 90i+c —+0'90urcl? V0 49
0/35: Vim: 3V ...
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 Fall '08
 NIKULIN

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