Lecture6a - Lecture 5. TRANSISTORS Topics: Field-Effect...

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Lecture 5. TRANSISTORS Objectives: Topics: Understand construction of transistors Identify transistor operation regions Obtain transistor V-I characteristics Field-Effect Transistors (FET) Bipolar Junction Transistors (BJT) Transistor V-I Characteristics
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Field-Effect Transistors - MOSFETs (metal-oxide-silicone), JFETs (junction), MESFETs (metal-silicone) N-Channel Enhancement-Mode MOSFET G - D - S - B - G n n p-substrate D S B SiO 2 - often connected to S a) Apply v GS >V TR b) Electric field is generated in SiO 2 c) e - drawn into substrate form a channel between D and S Operation: d) Apply small v DS – current starts flowing between D and S e) Increase v DS i D increases
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N-Channel Enhancement-Mode MOSFET (continued) v GS is used to open a channel between D and S If v DS is increased further does i D grow proportionally? G n n p-substrate D S -v GS + -v DS + i D a) v DS is increased b) Electric field becomes weaker on the D side of the channel c) Channel becomes narrow closer to D d) Even if v DS is increased further,
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This note was uploaded on 06/30/2010 for the course EECE 315 taught by Professor Nikulin during the Fall '08 term at Binghamton University.

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Lecture6a - Lecture 5. TRANSISTORS Topics: Field-Effect...

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