Lecture9a - Lecture 9. TRANSISTOR OPERATION Topics:...

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Lecture 9. TRANSISTOR OPERATION Objectives: Topics: Describe operation of phototransistors Obtain modified v-i characteristics Determine power dissipation of circuit elements Phototransistor Upward Slope of v-i Characteristics Power Limitations
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Phototransistor B C E nn p L I Add one extra pn- junction to a photodiode Responds to both light L I and current injected into the base i B No need to connect B to have current i C
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Upward Slope of V-I Characteristics v DS i D v GS =3V 4V 5V 6V 2 ) ( TR GS D V v K i = In C.C.R. we had Channel-length modulation causes v-i curves to slope upward in C.C.R. With the slope: λ =1/V A - channel-length modulation factor MOSFET
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v DS i D We had Base-width modulation causes v-i curves to slope upward in C.C.R. With the slope: BJT i B =20 µ A 40 µ A 60 µ A 80 µ A 100 µ A B F C i i β = EXAMPLE BJT, β F =100, V A =100V, i B =60 µ A. Find the slope
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Power Limitations Current flows into a device energy dissipates as heat Energy per unit time=Power For multi-port device MOSFET: 2 ports: G – S and D – S BJT: 2 ports: B – E and C – E
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This note was uploaded on 06/30/2010 for the course EECE 315 taught by Professor Nikulin during the Fall '08 term at Binghamton University.

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Lecture9a - Lecture 9. TRANSISTOR OPERATION Topics:...

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