sp04fet - Name: _________________ 3. Calculate the drain...

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Thomas J. Watson School of Engineering, and Applied Science Department of Electrical and Computer Engineering EE 332 Semiconductor Devices Name: _________________ FET Exam, Spring 2004 This exam is closed book, closed notes, two sheets (both sides) of paper are allowed. All work must be shown for credit. Questions 1 through 3 are worth 25, questions 4 through 8 are worth 5 points each. 1. Calculate V T for a Si-MOS transistor with an n + -polysilicon gate, silicon oxide thickness of 15nm, a channel doping of N A =5 x 10 16 cm -3 , a fixed charge of 1 × 10 11 qC/cm 2 , and channel length L=3 µ m.
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Name: _________________ 2. For the MOSFET in question 1, calculate the drain current using the simple long channel model at V G = 2V, V D = 5V. Assume an electron channel mobility µ n =300cm 2 /Vs, and the substrate is connected to the source. What is V DSat using this model?
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Unformatted text preview: Name: _________________ 3. Calculate the drain current in question 2 considering the effects of the longitudinal electric field in the channel. What is V DSat in this case? For the calculation take v sat = 4 x 10 6 cm/s N a m e : _________________ 4. If the drain voltage of a JFET is 5V, then what gate voltages could cause excessive gate current? 5. What physical phenomenon is expected to stop the scaling of the FET size to small dimensions in order to achieve faster performance? 6. What happens to the electric field in the channel of a FET when the channel length shrinks? (Assume a fixed 3.3V power supply voltage) 7. Give two techniques used to reduce the threshold voltage for a p-channel field effect transistor. 8. Describe how a HEMT (HFET) achieves high channel mobility....
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sp04fet - Name: _________________ 3. Calculate the drain...

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