lecture11 - Lecture 11 Friday February18 EE 332...

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Lecture 11 Friday February18 EE 332 Semiconductor Devices Problem Assignment Friday ! 3.23 and 3.26 Recombination Rate of EHP = np dt t dn r α = ) ( 0 0 2 0 0 2 of made was Use by m equilibriu at thermal p n n p n n G i r i r th = = = Spontaneous formation of electron hole pairs by thermal energy is independent of instantaneous concentrations. The G th rate is related to α r The rate is proportional to the n electrons waiting to decay and the p available states in the valance band. Steady State Solution () ( ) () [] 2 0 0 0 0 0 0 ) ( ) ( n n p n p n p p n n t p t n G G r r r r op th + + + = + + = = + ( Generation Rate = Recombination Rate) ) ( ) ( t p t n G G r op th = + Write instantaneous concentration as the equilibrium concentration plus a small departure. G op =optical generation ) ( ) ( ) ( ) ( 0 0 t p p t p t n n t n + = + = BecausewehaveEHP generation, n= p Steady State Solution () [ ] 2 0 0 0 0 n n p n p n G G r r op th + + + = + 0 0 but p n G r th = () []
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This note was uploaded on 06/30/2010 for the course EECE 332 taught by Professor Constable during the Spring '08 term at Binghamton.

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lecture11 - Lecture 11 Friday February18 EE 332...

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