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Unformatted text preview: Lecture 13 Wednesday February 23 EE 332 Semiconductor Devices Problem Assignment Monday Æ 4.1 and 4.5 Wednesday Æ 5.6 Diodes Device I-V curves and simple model For reverse bias the conductivity in near zero, and for forward bias the conductivity is high. Rectifier Circuit Current flows through the diode in the direction the triangle points Abrupt Junction Diode Approximation Using compensation the doping profile may look like the curve in the figure but we will assume a step concentration profile. Band Diagram Before Contact is Made What happens when these two semiconductors are brought into contact? Is charge transferred? ( ) [ ] ' ln ln D C n C f C n p n g bi N N kT n N kT E E E qV = = − = + − = δ δ δ Consequences of Forming a p-n Junction When p and n type materials are contacted, the high concentrations of electrons in the n-region diffuse into the p-region (and holes into the n- region) in accordance with diffusion tending to cause uniform distributions. Buildup of Electric Field Stops Diffusion...
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This note was uploaded on 06/30/2010 for the course EECE 332 taught by Professor Constable during the Spring '08 term at Binghamton.
- Spring '08