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Unformatted text preview: Lecture 19 Wednesday March 9 EE 332 Semiconductor Devices Problem Assignment Monday 6.13 Wednesday 3-problems listed below Diode Current Problem An abruptSip + n junction has the properties listed below: p-side n-side N a =5 10 17 cm-3 N d =1 10 15 cm-3 n =0.5 s n =1 s p =0.2 s p =2 s n = 400 cm 2 /Vs n = 1300 cm 2 /Vs p =170 cm 2 /Vs p = 570 cm 2 /Vs The cross sectional area of the junction is 1 10-4 cm 2 . Find the diode current for a forward bias of 0.7V. Understanding Problem In a p + n junction, the n-doping N d is doubled. How do the following change if everything else remains unchanged? Indicate only increase of decrease. a) Junction capacitance b) Built-in potential c) Breakdown voltage d) Ohmic losses Metal-SiProblem A Gewafer is doped with 10 15 cm-3 donors. (D n =100cm2/s, D p =50cm2/s). If the electron affinity of Ge=4.0eV, and we put down a metal electrode with work function=4.5eV, what is the work function difference? Do you expect this to be a Schottky barrier or an ohmic contact? Appendix C -Fabrication...
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This note was uploaded on 06/30/2010 for the course EECE 332 taught by Professor Constable during the Spring '08 term at Binghamton University.
- Spring '08