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lecture19

# lecture19 - Lecture 19 Wednesday March 9 EE 332...

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Lecture 19 Wednesday March 9 EE 332 Semiconductor Devices Problem Assignment Monday Æ 6.13 Wednesday Æ 3-problems listed below Diode Current Problem An abrupt Si p + n junction has the properties listed below: p -side n -side N a =5 × 10 17 cm -3 N d =1 × 10 15 cm -3 τ n =0.5 µ s τ n =1 µ s τ p =0.2 µ s τ p =2 µ s µ n = 400 cm 2 /Vs µ n = 1300 cm 2 /Vs µ p =170 cm 2 /Vs µ p = 570 cm 2 /Vs The cross sectional area of the junction is 1 × 10 -4 cm 2 . Find the diode current for a forward bias of 0.7V. Understanding Problem In a p + n junction, the n -doping N d is doubled. How do the following change if everything else remains unchanged? Indicate only increase of decrease. a) Junction capacitance b) Built-in potential c) Breakdown voltage d) Ohmic losses Metal-Si Problem A Ge wafer is doped with 10 15 cm -3 donors. (D n =100cm2/s, D p =50cm2/s). If the electron affinity of Ge=4.0eV, and we put down a metal electrode with work function=4.5eV, what is the work function difference? Do you expect this to be a Schottky barrier or an ohmic contact?

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Appendix C - Fabrication Silicon Production CO Si C SiO 2 2
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