lecture22 - Lecture 22 Friday March 18 EE 332 Semiconductor...

Info iconThis preview shows pages 1–4. Sign up to view the full content.

View Full Document Right Arrow Icon
Lecture 22 Friday March 18 EE 332 Semiconductor Devices Grade Distribution 0 2 4 6 8 Grade 40 50 60 70 80 90 100 Second Exam A A - B + B - B C + C - C C D B - Percentage Correct by Question 0 20 40 60 80 100 Question Percent Correct % 1234567891 0 1 1 Second Exam Questions Indicate as true or false if the following statements indicate there is an electric field in a semiconductor. a) the energy of the band edge of the conduction band increases along the length of the semiconductor. true b) the doping concentration increases along the length of the semiconductor. true c) The semiconductor has a high drift current. true d) The semiconductor has a high diffusion current. false e) Electron hole production at the end surface of the semiconductor produces a large minority concentration. false 1.
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
a) With a steady state current through a diode, the Fermi levels are equal. (false ) b) In equilibrium, the Fermi levels are equal. (true) c) Quasi-Fermi levels are used primarily to describe ( select correct statement ) i. a steady state condition, or ii. an equilibrium condition - false 2. As the voltage across a diode increases from zero to a the forward bias, the a) diffusion current increases. ( true ) b) drift current increases. ( false ) 3. In a pn-diode, the current across the depletion region of the junction is: i. primarily due to drift. ( false ) ii. primarily due to majority carriers. (false) 4. To forward bias a pn -diode, the positive terminal of the source voltage should be connected to the n-terminal of the diode. 5.
Background image of page 2
a) The electric field is maximum at the edge of the depletion region. ( false ) b)Ifthen-sideofa pn -diode is more lightly doped than the p-side, then the majority of the voltage is dropped across the n-side. ( true ) 6. What type of process is used to grow an oriented single-crystal layer on a substrate wafer? Epitaxy 7. What is the reason for using ion implantation? To implant a well controlled impurity doping concentration in a semiconductor.
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 4
This is the end of the preview. Sign up to access the rest of the document.

Page1 / 9

lecture22 - Lecture 22 Friday March 18 EE 332 Semiconductor...

This preview shows document pages 1 - 4. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online