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Unformatted text preview: Lecture 23 Wednesday March 30 EE 332 Semiconductor Devices Problem Assignment Second PSpice Problem Due April 8 Ch. 7 Review Questions 1,2,4,5 Ch. 7 Problems 7.3 and 7.4 n+-Si/SiO2/p-SiMOS capacitor (Fig. 7-1) Energy Band Diagram c) charge neutrality; (d) at equilibrium The surface of the p-type substrate near the oxide interface has become weakly inverted Band Structure Change with Applied Potential l Negative gate voltage raises P.E. Bands bend up because of higher hole concentration at oxide. l Positive voltage lowers gate P.E. Bands bend down from resulting electric field and results in lower hole concentration at oxide. l For high pos. gate voltage, E i below E Fs Æ n-type Æ inversion Band Structure with bias a) equilibrium b) negative bias c) immediately after applying positive bias d) steady state positive bias ; electrons generated in the transition region are trapped in the potential well at the interface Gate capacitance for an n-channel p-substrate MOS capacitor 1. Negative gate voltage attract holes in 1....
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This note was uploaded on 06/30/2010 for the course EECE 332 taught by Professor Constable during the Spring '08 term at Binghamton.
- Spring '08