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Unformatted text preview: Lecture 24 Friday April 1 EE 332 Semiconductor Devices Problem Assignment Second PSpice Problem Due April 8 Ch. 7 Review Questions 1,2,4,5 Wed. Æ Problems 7.3 and 7.4 Friday Æ Problems 7.6 and 7.10 -Plot I-V characteristics only. Channel Conduction Fig. III.6 Q is charge per area, or ∫ dx z y x n ) , , ( Channel Conduction Model Current across a cross sectional area. dy dV y y WQ I dy dV y y y WQ I y y y v y v y WQ I ch ch D ch L L ch D L ch D ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( µ ξ ξ µ ξ µ − = − = = − = − = Capacitor Potential Relation Applied gate potential = V = Q G /C ox =Q ox d/ ε ox Capacitance Def. C=Q/V Parallel plate formula C’ ox = ε ox A/d = ε ox /d (omit A) ε r = ε ox = 11.8 for silicon ε i = 3.9 for silicon dioxide V = Q G /C ox =(Q G /A)/(C ox /A) = Q’ G d/ ε ox Relation for Inversion Charge above V T with ) ( ) ( ) ( ) ( ' ' = − − = → − − = − − − = − = DS T GS ox ch T GS GS ch T GS T ch GS ch GS ch ox V V V C Q V V V Q V...
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This note was uploaded on 06/30/2010 for the course EECE 332 taught by Professor Constable during the Spring '08 term at Binghamton.
- Spring '08