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Unformatted text preview: Lecture 24 Friday April 1 EE 332 Semiconductor Devices Problem Assignment Second PSpice Problem Due April 8 Ch. 7 Review Questions 1,2,4,5 Wed. Problems 7.3 and 7.4 Friday Problems 7.6 and 7.10 -Plot I-V characteristics only. Channel Conduction Fig. III.6 Q is charge per area, or dx z y x n ) , , ( Channel Conduction Model Current across a cross sectional area. dy dV y y WQ I dy dV y y y WQ I y y y v y v y WQ I ch ch D ch L L ch D L ch D ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( = = = = = Capacitor Potential Relation Applied gate potential = V = Q G /C ox =Q ox d/ ox Capacitance Def. C=Q/V Parallel plate formula C ox = ox A/d = ox /d (omit A) r = ox = 11.8 for silicon i = 3.9 for silicon dioxide V = Q G /C ox =(Q G /A)/(C ox /A) = Q G d/ ox Relation for Inversion Charge above V T with ) ( ) ( ) ( ) ( ' ' = = = = = DS T GS ox ch T GS GS ch T GS T ch GS ch GS ch ox V V V C Q V V V Q V...
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- Spring '08