# lecture26 - Lecture 26 Wednesday April 6 EE 332...

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Lecture 26 Wednesday April 6 EE 332 Semiconductor Devices Problem Assignment Monday Æ Problems 7.11 and 7.12 Wednesday Æ Problem 8.3 Cross section of a MOSFET Finding V T from Low Excitation Voltage () () [] ch T GS DS lf DS DS T GS lf ox D V V V V L V V V V WC I + + = θ µ 1 Lv 1 2 sat 2 ' The I D expression considering the field in the channel For small V DS the v sat and V ch terms drops and small V GS -V T reduces this equation to: () = 2 2 ' DS DS T GS lf ox D V V V V L WC I Plot of I D vs V GS is st. line V T Plot Line intersects the V GS axis at V T + V DS /2. Slope used to find µ 0 and the deviation of the data from the straight line can be used to find θ . Unique result found by drawing the line drawn from maximum slope to I D =0

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Subthreshold Leakage Current () T GS nkT V V q D V V e I I T GS < = / 0 ' ' 1 ox B C C n + = decade / 60 3 . 2 log mV q kTn I V S D GS
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## This note was uploaded on 06/30/2010 for the course EECE 332 taught by Professor Constable during the Spring '08 term at Binghamton University.

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lecture26 - Lecture 26 Wednesday April 6 EE 332...

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