lecture27 - Lecture 27 Friday April 7 EE 332 Semiconductor...

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Unformatted text preview: Lecture 27 Friday April 7 EE 332 Semiconductor Devices Problem Assignment Monday Æ Problems 7.11 and 7.12 Wednesday Æ Problem 8.3 Friday Æ Problems 8.12 & 8.13 Pass-Through Current There is a time when both the NFET and PFET transistors are biased on resulting in current from VDD to ground. Significant power loss. Small-Signal Equivalent Circuit Relation between model and structure Extracting Model Parameters Slope from points C to D gives g d Change from points B to A gives g m DS D d GS D m V I g V I g ∂ ∂ = ∂ ∂ = Finding g m and g d from I-V Curves Unity Current Gain Æ Cutoff Frequency f T gs m d gs GD GS g v g i v C C f j i = + = ) ( 2 π Equating gate current and drain current for unity gain WL C g f ox m T ' 2 π = Short-Channel Effect The depletion region around the n + regions grows in the p-region shortening the channel. Short Channel Threshold Voltage (a) For long channels the drain voltage has negligible effect on the barrier at the source. (b) For short-channel devices the drain voltage tends...
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This note was uploaded on 06/30/2010 for the course EECE 332 taught by Professor Constable during the Spring '08 term at Binghamton University.

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lecture27 - Lecture 27 Friday April 7 EE 332 Semiconductor...

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