This preview has intentionally blurred sections. Sign up to view the full version.View Full Document
Unformatted text preview: Lecture 36 Monday May 4 EE 332 Semiconductor Devices Problem Assignment Monday Æ 11.8 and 11.9 Wednesday Æ Review questions 1-14 and the problem below. Problem Consider the inverter circuit shown to the right. Below is the input and output response. For the PMOS and NMOS devices shown, answer the questions on the next page. Problem (continued) a) is PMOS device an enhancement or depletion device? b) is NMOS device an enhancement or depletion device? c) Draw the circuit using the more specific symbols given to the right. See the diagram on the next slide for how the substrate is connected. Problem (continued) p + p + p + Solid State Laser Wavelength •GaAs has a direct band gap radiating at 0.87 µ m. •For fiber optics wavelength around 1.3 and 1.55 µ m are sought to obtain minimum dispersion or absorption. •Ternary or quaternary compound semiconductors, like In 1-x Ga x As y P 1-y, make this possible. They are fabricated by epitaxial growth . Material Lattice Constant vs. Bandgap The lattice constants of several common semiconductors. The solid lines indicate direct-gap materials; the dashed lines are indirect-gap. materials; the dashed lines are indirect-gap....
View Full Document
This note was uploaded on 06/30/2010 for the course EECE 332 taught by Professor Constable during the Spring '08 term at Binghamton.
- Spring '08