Chapter02 - Chapter 2 Solid-State Electronics Microelectronic Circuit Design Richard C Jaeger Travis N Blalock Jaeger\/Blalock Microelectronic Circuit

Chapter02 - Chapter 2 Solid-State Electronics...

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Jaeger/Blalock 4/15/07 Microelectronic Circuit Design, 3E McGraw-Hill Chap 2 - 1 Chapter 2 Solid-State Electronics Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock
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Jaeger/Blalock 4/15/07 Microelectronic Circuit Design, 3E McGraw-Hill Chap 2 - 2 Chapter Goals Explore semiconductors and discover how engineers control semiconductor properties to build electronic devices. Characterize resistivity of insulators, semiconductors, and conductors. Develop covalent bond and energy band models for semiconductors. Understand band gap ernergy and intrinsic carrier concentration. Explore the behavior of electrons and holes in semiconductors. Discuss acceptor and donor impurities in semiconductors. Learn to control the electron and hole populations using impurity doping. Understand drift and diffusion currents in semiconductors. Explore low-field mobility and velocity saturation. Discuss the dependence of mobility on doping level.
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Jaeger/Blalock 4/15/07 Microelectronic Circuit Design, 3E McGraw-Hill Chap 2 - 3 The Inventors of the Integrated Circuit Jack Kilby Andy Grove, Robert Noyce, and Gordon Moore with Intel 8080 layout.
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Jaeger/Blalock 4/15/07 Microelectronic Circuit Design, 3E McGraw-Hill Chap 2 - 4 The Kilby Integrated Circuit Semiconductor die Active device Electrical contacts
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Jaeger/Blalock 4/15/07 Microelectronic Circuit Design, 3E McGraw-Hill Chap 2 - 5 Solid-State Electronic Materials Electronic materials fall into three categories: Insulators Resistivity ( ρ ) > 10 5 Ω -cm – Semiconductors 10 -3 < ρ < 10 5 Ω -cm – Conductors ρ < 10 -3 Ω -cm Elememental semiconductors are formed from a single type of atom, typically Silicon. Compound semiconductors are formed from combinations of column III and V elements or columns II and VI. Germanium was used in many early devices. Silicon quickly replaced silicon due to its higher bandgap energy, lower cost, and is easily oxidized to form silicon- dioxide insulating layers.
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Jaeger/Blalock 4/15/07 Microelectronic Circuit Design, 3E McGraw-Hill Chap 2 - 6 Semiconductor Materials (cont.) Semiconductor Bandgap Energy E G (eV) Carbon (diamond) 5.47 Silicon 1.12 Germanium 0.66 Tin 0.082 Gallium arsenide 1.42 Gallium nitride 3.49 Indium phosphide 1.35 Boron nitride 7.50 Silicon carbide 3.26 Cadmium selenide 1.70
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Jaeger/Blalock 4/15/07 Microelectronic Circuit Design, 3E McGraw-Hill Chap 2 - 7 Covalent Bond Model Silicon diamond lattice unit cell. Corner of diamond lattice showing four nearest neighbor bonding. View of crystal lattice along a crystallographic axis.
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Jaeger/Blalock 4/15/07 Microelectronic Circuit Design, 3E McGraw-Hill Chap 2 - 8 Silicon Covalent Bond Model (cont.) Near absolute zero, all bonds are complete. Each Si atom contributes one electron to each of the four bond pairs.
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  • Spring '09
  • Blalock
  • Microelectronic Circuit Design

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