Conductimetric_sensors Part2b

Conductimetric_sensors Part2b - while the final downward...

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Conductimetric Sensors Part 2b
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ASU‘s EBL Nanopores ASU‘s EBL Nanopores L. Petrossian et al. JMEMS 16 (6), 1419- 1427(2007) use an SOI wafer as a substrate and EBL to pattern the nanopore oxidize the wafer to shrink the pore size BOX provides stability for the thin membrane during processing steps BOX reduces capacitance BOX is removed wet chemically through the nanopore
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ASU‘s EBL Nanopores ASU‘s EBL Nanopores Voltage sweep from 125 mV to 200 mV in increments of 25 mV through a 240 nm aperture in the presence of 100 nm beads . The downward spikes at the beginning of the waveform are due to interactions of the nanoparticle with the aperture entrance
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Unformatted text preview: while the final downward spike is a transition event. L. Petrossian, Ph.D. Thesis, Dec. 2007 ASUs EBL Nanopores ASUs EBL Nanopores Comparison of measured I with calculated I using equation (8) L. Petrossian, Ph.D. Thesis, Dec. 2007 ASUs EBL Nanopores ASUs EBL Nanopores L. Petrossian, Ph.D. Thesis, Dec. 2007 Current through a 78 nm cylindrical aperture in the presence of 28 nm polystyrene beads in 0.1 M KCl while applying -600 mV. Binning of the current through a 78 nm cylindrical aperture in the presence of 28 nm polystyrene beads in 0.1 M KCl while applying -600 mV....
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Conductimetric_sensors Part2b - while the final downward...

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