4.1 - ECE3080, Chapter 4.1 1 June 16, 2005 ECE 3080:...

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Unformatted text preview: ECE3080, Chapter 4.1 1 June 16, 2005 ECE 3080: Chapter 4.1 – BJT O. Brand, 1 of 17 Chapter 4 – The BJT Bipolar Junction Transistor 4.1 BJT Basics 4.2 Static Analysis 4.3 Non-Idealities 4.4 Dynamic Behavior 4.5 Modern BJT Structures Literature: Pierret, Chapter 10-12, page 371-462 Sze, Chapter 5, page 130-168 Neamen, Chapter 10, page 367-438 June 16, 2005 ECE 3080: Chapter 4.1 – BJT O. Brand, 2 of 17 4.1 BJT Basics 4.1.1 Structure and Fabrication 4.1.2 Terminology and Effects – Circuit Symbols – Circuit Configurations – Modes of Operation 4.1.3 Basic Operation – Equilibrium – Active Mode Pierret, Chapter 10, page 371-385 ECE3080, Chapter 4.1 2 June 16, 2005 ECE 3080: Chapter 4.1 – BJT O. Brand, 3 of 17 4.1.1 BJT Structure & Fabrication BJT – Bipolar Junction Transistor • Bipolar : electrons and holes participate in the conduction process • Junction : two coupled pn-junctions with a joint base region • Transistor : transistor action requires that the base width W is much smaller than the minority carrier diffusion length L in the base W << L = D ! June 16, 2005 ECE 3080: Chapter 4.1 – BJT O. Brand, 4 of 17 Basic Device Structures PNP Transistor • Easier to explain and understand N A,E » N D,B > N A,C NPN Transistor • More common in device applications, because of the larger mobility of the minority carriers (electrons) in the base N D,E » N A,B > N D,C E B C p + n p Emitter Base Collector E B C n + p n Emitter Base Collector ECE3080, Chapter 4.1 2 June 16, 2005 ECE 3080: Chapter 4.1 – BJT O. Brand, 3 of 17 4.1.1 BJT Structure & Fabrication BJT – Bipolar Junction Transistor • Bipolar : electrons and holes participate in the conduction process • Junction...
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This note was uploaded on 08/28/2010 for the course ECE 3080 taught by Professor Staff during the Spring '08 term at Georgia Tech.

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4.1 - ECE3080, Chapter 4.1 1 June 16, 2005 ECE 3080:...

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