{[ promptMessage ]}

Bookmark it

{[ promptMessage ]}

# hw2 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL OF ELECTRICAL...

This preview shows pages 1–2. Sign up to view the full content.

ECE 3080: Homework #2 Due Date: June 23, 2005 Page 1 of 2 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080: Semiconductor Devices for Computer Engineering and Telecommunication Systems Summer Semester 2005, Homework #2 Homework Due Date: Thursday, June 23, 2005 1. Carrier Transport: Continuity Equation (40 points) Assume a 1-dimensional silicon crystal, which has been doped with 10 17 cm -3 phosphorous atoms. Using a high-energy light source, 10 14 cm -3 additional electron-hole pairs are generated at x = 0 in the stationary state (dp/dt = dn/dt = 0). (a) Can we consider low-level injection or do we have to assume high-level injection? Justify your answer. (b) Calculate analytical expressions for the minority carrier distribution p n (x) in the stationary state for x > 0 for the following two cases: (i) Infinitely long semiconductor with p n (x= ) = p n0 (see sketch (i)) (ii) Semiconductor with length W and p n (x=W) = p n0 (see sketch (ii))

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
This is the end of the preview. Sign up to access the rest of the document.
• Spring '08
• Staff
• P-n junction, GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL OF ELECTRICAL, minority carrier distribution, reverse-bias junction capacity

{[ snackBarMessage ]}

### Page1 / 2

hw2 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL OF ELECTRICAL...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online