ECE3080_Homework4 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL...

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ECE 3080A: Homework #4 Due Date: Nov. 7, 2005 Page 1 of 2 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080A: Semiconductor Devices for Computer Engineering and Telecommunication Systems Fall Semester 2005, Homework #4 Homework Due Date: Monday, November 7, 2005 1. BJT: Transistor Parameters (15 points) In a pnp bipolar junction transistor, the doping concentrations for the emitter, base and collector are 2 10 18 , 10 17 , and 5 10 16 cm -3 , respectively. The base width is 0.7 μm and the diffusion length of the minority carriers in the emitter and base are 20 μm. Calculate the emitter efficiency, the base transport factor, and the common-emitter and common-base current gains. 2. BJT: Emitter Crowding (20 points) Consider the geometry shown in the schematic below. The base doping concentration is N B = 10 16 cm -3 , the effective base width W = 0.8 μm, the emitter width is S = 10 μm, and the emitter length is L = 10 μm. (a) Determine the resistance of the base between x = 0 and x = S/2. Assume a hole mobility
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This note was uploaded on 08/28/2010 for the course ECE 3080 taught by Professor Staff during the Spring '08 term at Georgia Institute of Technology.

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ECE3080_Homework4 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL...

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