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ECE3080_Homework3

# ECE3080_Homework3 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL...

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ECE 3080A: Homework #3 Due Date: Oct. 12, 2005 Page 1 of 2 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080A: Semiconductor Devices for Computer Engineering and Telecommunication Systems Fall Semester 2005, Homework #3 Homework Due Date: Wednesday, October 12, 2005 1. PN Junction: Reverse-Bias Junction Capacity (20 points) The reverse-bias junction capacity of a silicon step junction has been measured for two applied voltages. The result is 43.4 nF/cm 2 at V A = -3 V and 27.6 nF/cm 2 at V A = -10 V (a) Calculate the built-in potential V bi . (b) Calculate the substrate doping N B . Given are the elementary charge q = 1.6·10 -19 C and the dielectric constant for silicon ε = K S ε 0 = 11.9 · 8.85·10 -14 F/cm. 2. PN Junction: Reverse-Bias (20 points) A GaAs pn-junction at T = 300 K has impurity doping concentrations of N A = 10 16 cm -3 and N D = 5 10 16 cm -3 . For a device application, the ratio of junction capacitances at two values of reverse bias voltage must be C j (V A1 )/C j (V A2 ) = 3 where the reverse bias voltage V A1 = –1 V.

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• Spring '08
• Staff
• P-n junction, pn junction, GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL OF ELECTRICAL, reverse-bias junction capacity

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ECE3080_Homework3 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL...

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