hw32 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL OF ELECTRICAL...

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ECE 3080: Homework #3 Due Date: July 5, 2005 Page 1 of 2 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080: Semiconductor Devices for Computer Engineering and Telecommunication Systems Summer Semester 2005, Homework #3 Homework Due Date: Tuesday, July 5, 2005 1. BJT: Fabrication Tolerances (10 points) (a) If, because of fabrication tolerances, the effective base width W for a set of transistors varies over the range 0.8 W 1.0 μm, determine the variation in the base transport factor α T . Assume L B = 14 μm. (b) Using the results of part (a) and assuming an emitter efficiency γ = 0.9967, what is the variation in the common emitter current gain. 2. BJT: Minority Carrier Distribution (30 points) An npn silicon bipolar transistor at T = 300 K has uniform dopings of N E = 10 19 cm -3 , N B = 10 17 cm -3 , and N C = 7 10 15 cm -3 . The transistor is operated in the inverse-active mode with V BE = – 2 V and V BC = 0.75 V. (a)
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hw32 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL OF ELECTRICAL...

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