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# HW4 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL OF ELECTRICAL...

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ECE 3080: Homework #4 Due Date: July 21, 2005 Page 1 of 2 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3080: Semiconductor Devices for Computer Engineering and Telecommunication Systems Summer Semester 2005, Homework #4 Homework Due Date: Thursday, July 21, 2005 1. MOS-Capacitor: Band Diagram: (30 points) Shown below is an energy band diagram for an ideal MOS-capacitor operated at T = 300 K with V G 0. Note that E F = E i at the Si-SiO 2 interface. (a) Do equilibrium conditions prevail inside the semiconductor ? (b) Calculate the Fermi potential Φ F . (c) Calculate the surface potential Φ S . (d) Calculate the gate voltage V G . (e) Calculate the oxide thickness x o . (f) Sketch the general shape of the low-frequency C-V characteristic to be expected from the given MOS-C. Place an X on the C-V characteristic at a point that roughly corresponds to the state pictured in the energy band diagram. 2. MOS-Capacitor: C-V Characteristic: (30 points) The high-frequency C-V characteristic of an MOS-capacitor is displayed below. The area of

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HW4 - GEORGIA INSTITUTE OF TECHNOLOGY SCHOOL OF ELECTRICAL...

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