Each zone contains a contiguous collection of tracks

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Unformatted text preview: M cell to lose its charge within a time period of around 10 to 100 milliseconds. Fortunately, for computers operating with clock cycles times measured in nanoseconds, this retention time is quite long. The memory system must periodically refresh every bit of memory by reading it out and then rewriting it. Some systems also use error-correcting codes, where the computer words are encoded a few more bits (e.g., a 32-bit word might be encoded using 38 bits), such that circuitry can detect and correct any single erroneous bit within a word. Figure 6.2 summarizes the characteristics of SRAM and DRAM memory. SRAM is persistent as long as power is applied to them. Unlike DRAM, no refresh is necessary. SRAM can be accessed faster than DRAM. SRAM is not sensitive to disturbances such as light and electrical noise. The tradeoff is that SRAM cells use more transistors than DRAM cells, and thus have lower densities, are more expensive, and consume more power. Transistors per bit 6 1 Relative access time 1X 10X Persistent? Ye...
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This note was uploaded on 09/02/2010 for the course ELECTRICAL 360 taught by Professor Schultz during the Spring '10 term at BYU.

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