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Unformatted text preview: University of California, San Diego Department of Electrical and Computer Engineering ECE65, Spring 2010 Lab 2: Diode iv Characteristics, Zener Diode Experiment 1: General Purpose diode iv Characteristics This simulation shows how to measure iv characteristics of a diode. The circuit is made of an 1N4148 diode and R = 1 kΩ. i D D- +- + R A C B v v i D D i i i A C B v- + 1 k 1 k (a) (b) Pspice Simulation: Simulate circuit (a) above with v i being a 1-kHz triangular wave with a peak to peak value of 15 V and a DC offset of- 5 V ( i.e., input signal ranges from- 10 to +5 V. Runs the simulation for a few periods. Plot i D vs v D . On your plot, identify forward-bias and reverse-bias regions. Lab Exercise: It turns out that we cannot use the simple circuit above to measure the iv characteristics of the diode in the lab and we need a more complicated circuit: Build the circuit (b) above with a 741 OpAmp chip. The chip should be powered with ± 15 V supplies. Set the function generator to produce a triangular wave with a frequency ofsupplies....
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This note was uploaded on 09/10/2010 for the course ECE 107 taught by Professor Fullterton during the Spring '07 term at UCSD.
- Spring '07