lec2 - ECE 3060 VLSI and Advanced Digital Design Lecture 2...

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ECE 3060 VLSI and Advanced Digital Design Lecture 2 MOS Transistor
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ECE 3060 Lecture 2–2 The pn Junction Majority carriers diffuse from n to p and from p to n, leaving trapped impurity (donor) ions behind Width of depletion region is inversely proportional to carrier concentration >5V
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ECE 3060 Lecture 2–3 MOS Subthreshold Region Subthreshold Region , Subthreshold current is due to reverse bias leakage current of diode between diffusion and substrate I ds 0 V gs V
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ECE 3060 Lecture 2–4 MOS Linear Region The inversion layer (channel) is symmetric, until: I ds β V gs V t () V V 2 2 --------- = O V V V t ≤≤
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ECE 3060 Lecture 2–5 MOS Linear Region Transverse electric field distorts the channel I ds β V gs V t () V V 2 2 --------- = O V V V t ≤≤
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ECE 3060 Lecture 2–6 MOS Saturation Region Channel is pinched off when Current is swept through depletion region electric field after leaving channel.
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lec2 - ECE 3060 VLSI and Advanced Digital Design Lecture 2...

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