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# Quiz8 - Quiz 8(10 points EEE 3396 Spring 2010 Name email...

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Unformatted text preview: Quiz 8 (10 points) EEE 3396 Spring 2010 Name .............................. email ............................ PIN (any 4 digits) ........... Closed book, no notes. Show work for credit and box-in your answer. Note c= 3X108m/s, h=663x1034Js, mo=—9 11x1031 kg, q—16x1019C, n.3,(300K)=1.5x1010/cm3,=8o 88',5x1014F/cm e,s,=11. 8, k=138x1023J/Ke,3102 —3 9 T=300K, EGS,= 1 11eV,1eV=1.6x1019J, 1 Angstrom=10'8 cm, lnm=10'70m. Calculate for an ideal MOS structure (VFB= 0) at T=300K having NA=1016/cm3 and tox= 100A. 1a. The depletion width at the onset of strong Inversion in um 1b. The threshold voltage VT M11912 \{VLGD '- V‘Fléro VT: —- %gl+gz{5 deﬁ _C§qub\) (23: 2Q“: 5;%@31‘62 .1 l3) w :5 2606+: will arm? l0 w; 2 (98)”)(6/C’X H (PXO.33 “361-(O—YW‘JSOO '2) pup, 1€x10 "7X 1'0"” (ﬁll/1C2 (25;: rat/QA'QQ' 3 W 1.6xz6“! “”010 . .49 A 11;) VUZQCQCL‘ _~: eoezsm 2 dame *3 :. 2.11170 2th elm to?) x1e"? V, .-M +2109?) 2 x :— 98 111: —~ ~ Km (0 mﬂ’og ‘ 70°37“ ...
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