ECE3080Homework4

ECE3080Homework4 - Homework 4 1) A semiconductor at room...

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Homework 4 1) A semiconductor at room temperature (27 degrees C) has the following parameters: Hole Diffusion coefficient, D p =11.86 cm 2 /Sec Electron Diffusion coefficient, D n =33.625 cm 2 /Sec Substrate intrinsic concentration, n i =1e10 cm -3 Also, these conversion factors may help: Amp=Coulomb/Sec, and Coulomb=Joule/Volt The sample is in non-equilibrium with the following energy band relationships a.) What are the electron and hole current densities, J n and J p at position x=10 µ m? Make sure you support your answer with equations or a discussion. b.) What are the electron and hole current densities, J n and J p at position x=20 µ m? Make sure you support your answer with equations or a discussion.
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2) Betavoltaic power sources (generating power using energetic particles from a radioactive source) pre-date photovoltaic (solar cell) power sources but have never caught on due to the limited power produced compared to the defects created due to the radiation damage. A thin SiC semiconductor material of thickness 2 um
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ECE3080Homework4 - Homework 4 1) A semiconductor at room...

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