TsividisBGanalysis - 1076 IEEE JOURNAL OF...

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1076 IEEE JOURNAL OF SOLID-STATECIRCUITS, VOL. SC-15, NO. 6, DECEMBER 1980 James D. Beasom received the B.S. (with dis- tinction) in engirieering science from Permsyl- vania State University, University Park, and the M.S. in electrical engineering from the Univer- sity of Michigan, Ann Arbor. He joined Harris Semiconductor in July 1966 as a Senior Engineer assigned to a process and device development group. While a member of that group, he studied thermal oxides and developed processes for the fabrication of n-channel and p-channel MOSFET’S. Subse- quently, he joined the Product En@eering Group as a Circuit Engineel working on the development of three custom, radiation-hardened digital circuits. Later, he transferred to the Device Group of the Engineering Department, His assignments in that group included linear p-n-p design; development of complementary finear device processes; development of processes for the fabrication of n-p-n’s and FET’s in a monolithic substrate; design of hardened TTL devices; and develop- ment of a. number of linear and digital circuits employing these pro- cesses, Currently, he is the Manager of the Analog Technology Depart- ment. He directs and participates in the design and development of new linear devices and processes. His group is responsible for the initial device design and process development for rdl Harris Semiconductor linear circuits. It is also responsible for pilot wafer fabrication of these products to prove yields and reliability before they are released for production. He is currently developing processes for the fabrication of high-frequency and high-current complementary linear devices and the fabrication of complementary bipolars and FET’s in a monolithic substrate. He is also developing a GHz frequency range MOS IC pro- cess. His patents include: an improved tield effect transistor, a process for simultaneous fabrication of n-p-n’s, p-n-p’s, and MOS devices, a pro- cess for forming buried layers to reduce collector resistance in top contact transistors, and an improved semiconductor device (quasi- vertical transistor). Accurate Analysis of Temperature Effects in /c-l/BE Characteristics with Application to Bandgap Reference Sources YANNIS P. TSIVIDIS, MEMBER,lEEE Abstract–The inaccuracy of the analyses commonly used for predict- ing the temperature behavior of the Ic- V~ characteristics of transis- tors and the output of bandgap reference sources is pointed out. The problem is traced to a basic assumption implicit, in such analyses, namely that the variation of the bandgap voltage of silicon with tem- perature is Iinear; this assumption is shown to be of poor accuracy. By taking into account the nonlinearity in this variation, new accurate formulas tire derived. Both the previous analyses and the proposed analysis tie compared to experiment; a valuable improvement is dem.
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This note was uploaded on 09/19/2010 for the course EE 7326 taught by Professor Jimhellums during the Spring '08 term at University of Texas at Dallas, Richardson.

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TsividisBGanalysis - 1076 IEEE JOURNAL OF...

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