diff_lna3_tsmc - 18.2 G H z Differential Low Noise...

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Unformatted text preview: 18.2 G H z Differential Low Noise Amplifier for On- chip Ultra Wide Band Transceiver Md. ArifulHaque,MirSaddamHossain,ShamsuddinAhmed andA.B.M.H.Rashid,SeniorMemberIEEE DepartmentofElectrical& ElectronicEngineering,BangladeshUniversityofEngineering& Technology,Dhaka-1000, Bangladesh.E-mail: arif6008gyahoo.com. Abstract- In thispaper an 18.2 GHz differential low noise amplifier(LNA) isproposed foruseinon chipultrawideband transceiver. We used TSMC 0.35 gm process MOSFET model parameters and thesimulations arecarriedoutusingCadence Spectre simulator. The single stage differential LNA shows 22.06 dB voltage gainat18.2GHz with a operatingfrequency band of 7.87 GHz. It achieves 0.4162 dB noise figure, Sll =-16.701 dB,S12= -6.46916dB,S21= 3.61662dB,S22= -7.7075 dB. Its 1 dB compression point is -14.599 dBm and input referredIP3is-10.9778 dBm. The circuitoperatesat+1 V and-1 V supplyvoltageandconsumes0.50m W power. I. INTRODUCTION Into-daysadvancedCMOS process,notthedevicedelay butthedelaydue totheinterconnectedparasitichurtsthe circuitsandsystemperformance[1-2].Thespeedlimitationsof conventionalinterconnectmetallineshaveledtotheconceptofon- chipwirelessinterconnectionsusingintegratedantennaonSi[3-5]. Forhighdatatransmissionratesandmultipleaccesscapabilitiesof thewirelessinterconnectsystem,widebandcharacteristicsofan integratedtransmitterandreceiverarerequired.Toachievethese characteristicsatimehoppingultrawideband(UWB)systemhas beenproposedrecently[6].AsthefirstblockinaUWB receiver, itisrequiredthattheLow Noise Amplifier(LNA) should have sufficient gain, low noise figure,high linearityand good input output matching. A high gain and low noise figureisrequiredtosuppressnoisefromthereceivedsignal asmuch aspossibleprovidinghighgaintothesucceeding stagesuchasamixer.A highlinearityisrequiredwhenthe transmitter and receiver are close enough in order to accommodatethestrongsignal.AsthisLNA isdesignedto beusedinonchipUWB transceiveritshouldalsoconsume lowpower. Sinceon-chip integratedantenna willfeedthe LNA directlyitshould have high operating frequency in ordertoreducetheantenna size.Ifthesizeofthedipole antennaislimitedto2mm in length,theoperatingfrequency of the LNA should be 18 GHz [4]. Again the gain characteristics ofthe antenna [4} and its use in a UWB system [6] require thatthe LNA should have ultrawide bandwidth. CMOS LNA foruse in GPS application and operating at 1.3 GHz and 1.5 GHz input frequencieshave been reported in [7] and [8],respectively. CMOS LNA operating at5 GHz rangehasbeen reportedin[9]-[10].A LNA operatingat26-42GHzhasbeenreportedin [11]butit isbuilt on SOI-CMOS process. UWB LNAs have been reported at 3-5 GHz bandwidth [12] and 3.1-10.6 GHz bandwidth [13]. However, to the best ofour knowledge, LNA operatingnear 18 GHz on CMOS process have not beenreportedyet....
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This note was uploaded on 09/19/2010 for the course EE 7V88 taught by Professor Dr.karba during the Fall '09 term at University of Texas at Dallas, Richardson.

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diff_lna3_tsmc - 18.2 G H z Differential Low Noise...

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