lecture4 - Active devices B n+ E p C E n+ E B C n+ p...

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1 Active devices C B E p substrate n+ p n substrate p well S D G E B C p n E B C p D G S D G S BJT MOSFET n-MOSFET characteristic
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2 MOSFET types GS V 0 > DS V + + GS V 0 < DS V + GS V 0 > DS V + + GS V 0 < DS V + Dn I Dn I Dp I Dp I 0 < Tn V 0 > Tn V 0 > Tp V 0 < Tp V channel n channel p depletion t enhancemen + + Our objective- CMOS inverter DD V + + O v I v + GSp v + GSn v + p MOSFET n MOSFET CMOS = Complementary MOS
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3 (about circuit diagrams) + O v I v + GSp v + GSn v + + DD V + “ground” = common terminal for power supplies DD V + + O v I v + GSp v + GSn v + DC voltage with respect to ground terminals Our objective- CMOS inverter DD V + + O v I v + GSp v + GSn v + DD V + + O v 0 = I v + DD V + + O v DD I V v = + O v I v DD V Tn V DD V | | Tp DD V V DD i I v DD V Tn V | | Tp DD V V
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4 Really big advantage of CMOS Ideally zero static power (power when not switching from 0 to 1) O v I v DD V Tn V DD V | | Tp DD V V DD i I v DD V Tn V | | Tp DD V V i DD = 0 Integrated circuit fabrication fabrication process = a series of steps performed sequentially
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lecture4 - Active devices B n+ E p C E n+ E B C n+ p...

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