CMOS Comb Desig - B D B D C A Y X B D A C Y X B D X X Y OUT...

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B A B A’ B’ B’ D’ D C Y X D C’ Y’ X’ D’
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X’ X Y OUT X Y’ X’ OUT’
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A = 0 V DD Mn Mr V DD X Out M2 Level restorer B M1 Level restoration
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During transition of node X from high to low - Pass transistor attempts to pull down node X - Level restorer pulls X to V DD Pull down network (M n ) must be stronger than pull-up device M r to switch node X taking equivalent on resistance of M 1 as R 1 taking equivalent on resistance of M 2 as R 2 taking equivalent on resistance of M r as R r When R r is too small it is impossible to bring the voltage of X below switching threshold of inverter- locked state
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Problem resolved by sizing the transistors M n and M r such that gate voltage at node X drops below the switching threshold of inverter V M . M r and M n - resembles pseudo nMOS with M r as load and M n as Pull-down network. Assuming M1 and M2 sized to have switching threshold at V DD /2 Node X must be pulled below V DD /2.
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CMOS Comb Desig - B D B D C A Y X B D A C Y X B D X X Y OUT...

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