Dynamic LOG Ckts.I - VT0 = 0.8V, = 0.4 V , | 2F| = 0.6V,...

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V T0 = 0.8V, γ = 0.4 V ½ , | 2 φ F | = 0.6V, C ox = 0.065fF/ µ m 2 C’ metal = 0.036fF/ µ m 2 , C’ poly = 0.055fF/ µ m 2 , C j0 = 0.095fF/ µ m 2 C j0sw = 0. 2fF/ µ m C in = C gb + C poly + C Metal C db = C bottom + C sidewall
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Oxide related capacitance C gb = C ox .W.L mask = 0.065fF/ µ m 2 (4μm x 2 μm ) = 0.52fF C metal = 0.036fF/ µ m 2 (5μm x 5 μm ) = 0.90fF C poly = 0.055fF/ µ m 2 (36μm 2 x 8 μm 2 ) = 2.42fF
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Parasitic junction capacitance associated with drain-substrate pn junction of the pass transistor C db, max = C bottom + C sidewall = A bottom . C jo + P sidewall . C j0sw = (36 µ m 2 + 12 µ m 2 ) . 0.095fF/ µ m 2 + 30 µ m. 0.2 fF/ µ m. = 10.56 fF Minimum value of C db obtained when junction biased with maximum possible voltage V max V max = 5.0 – 0.8 – substrate bias effect = 3.68V C db, min = 4.71fF ( due to C bottom and C sidewall )
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C x,min = C gb + C metal + C poly + C db,min = 8.55 fF Amount of critical charge drop in soft node is Q critical,min
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This note was uploaded on 09/24/2010 for the course EEE MEL G621 taught by Professor Gurunarayanan during the Fall '08 term at Birla Institute of Technology & Science, Pilani - Hyderabad.

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Dynamic LOG Ckts.I - VT0 = 0.8V, = 0.4 V , | 2F| = 0.6V,...

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