MOS Switching Char1. - The CMOS Inverter: VDD Vin Vout CL...

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The CMOS Inverter: V DD V in V out C L
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MOS INVETER SWITCHING CHARACTERISTICS
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An n-channel enhancement type MOS transistor with Substrate doping 2 x 10 15 /cm 3 Source./ drain doping 10 19 /cm 3 Sidewall ( p+) doping = 4 x 10 16 /cm3 Gate oxide thickness tox = 45 nm Junction depth xj = 1.0 µ m 10 µ m Both source and drain surrounded By p+ channel-stop. Substrate at 0V Drain voltage varies from 0.5V to 5V. Find drain substrate junction Capacitance C db 5 µ m S D G 2 µ m
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MOS INVETER SWITCHING CHARACTERISTICS To study the dynamic behavior of inverter circuits The delays involved in switching transients
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D S G B C GD C GS C SB C DB C GB Cgs , Cgd : gate overlap capacitances Cdb, Csb : Voltage dependent junction capacitance
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Cgs , Cgd : gate overlap capacitances Cdb, Csb : Voltage dependent junction capacitance Cg : Thin- oxide capacitance over gate area Cint : lumped interconnect capacitance – parasitic contribution of metal (or) polysilicon between two inverters.
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for both the transistors Csb n, Csb p has no effect. Cgs n
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This note was uploaded on 09/24/2010 for the course EEE MEL G621 taught by Professor Gurunarayanan during the Fall '08 term at Birla Institute of Technology & Science, Pilani - Hyderabad.

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MOS Switching Char1. - The CMOS Inverter: VDD Vin Vout CL...

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