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MIT6_012s09_tutor09

MIT6_012s09_tutor09 - • Assume that recombination only...

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MIT OpenCourseWare http://ocw.mit.edu 6.012 Microelectronic Devices and Circuits Spring 2009 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms .
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6.012 Microelectronic Devices and Circuits Tutorial #9 Problem 1 pnp Bipolar Junction Transistor Parameters for pnp BJT: N aE = 10 18 cm 3 N dB = 10 16 cm 3 N aC = 10 15 cm 3 D nE = 20 cm 2 /s D nC = 30 cm 2 /s D pB = 10 cm 2 /s A E = 100 μ m 2 L B = 1.0 μ m L E = 2.0 μ m L C = 3.0 μ m L E and L C are the distances between the contacts and the abrupt junctions. L B is the distance between the base emitter and base collector abrupt junctions. Note that L E , L B and L C are not widths of the quasi neutral regions in the Emitter, Base and Collector
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Unformatted text preview: . • Assume that recombination only occurs at the contacts and that there is no recombination in the quasi ‐ neutral regions or the space charge regions. a) What are the thermal equilibrium values of the potential barrier for the base ‐ emitter ( φ BE ) and base ‐ collector ( φ BC ) junctions? b) What is the width of the quasi ‐ neutral base region, W B at equilibrium? c) What is β F (ignore the effect of the depletion region under forward bias for this calculation)?...
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  • Spring '08
  • CharlesSodini
  • Bipolar junction transistor, Microelectronic Devices and Circuits, Microelectronic Devices, MIT OpenCourseWare http://ocw.mit.edu, base‐collector abrupt junctions, pnp Bipolar Junction

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