MIT6_012s09_tutor08

# MIT6_012s09_tutor08 - p = 1.0 μ m and W n = 1.0 μ m For V...

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MIT OpenCourseWare 6.012 Microelectronic Devices and Circuits Spring 2009 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms .

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6.012 Microelectronic Devices and Circuits Tutorial #8 Problem 1 pn junction diode 1. A one sided, short base, p/n+ diode has the following properties: Na = 1x10 16 cm 3 , Nd = 1x10 19 cm 3 , area = 400 μ m 2 , W
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Unformatted text preview: p = 1.0 μ m, and W n = 1.0 μ m. For V D = ‐ 2.5V / V D = 0V / and V D = 0.45V, a) What is the depletion layer width? b) What is the maximum electrostatic field in the depletion region? c) What is the minority carrier concentration at the edges of the depletion layer? d) What is the minority carrier concentration at the contacts?...
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## This note was uploaded on 09/24/2010 for the course EE 6.012 taught by Professor Charlessodini during the Spring '08 term at MIT.

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MIT6_012s09_tutor08 - p = 1.0 μ m and W n = 1.0 μ m For V...

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