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MIT6_012s09_tutor05

MIT6_012s09_tutor05 - when the surface is inverted at the...

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MIT OpenCourseWare http://ocw.mit.edu 6.012 Microelectronic Devices and Circuits Spring 2009 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms .
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6.012 Microelectronic Devices and Circuits Tutorial #5 Problem 1 n MOSFET You are given an n MOSFET with the following parameters V Tn = 0.5 V , μ n = 250 c m 2 / V s , t ox = 10 n m , = 0.5 μ m , = 25 μ m The MOSFET is biased as shown in Figure T5 1 with the following initial bias conditions: V GS = 2.5 V , V DS = 2.5 V , V BS = 0 V I D V DS V DS + + V BS + V GS Figure T5 1. a) In what regime of operation is the MOSFET? b) Ignoring secondary effects such as channel length modulation (CLM), what is the drain current I D ? c) If the substrate doping is N a =10 17 cm 3 , what is the maximum bulk
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Unformatted text preview: when the surface is inverted at the source end Q Bmax (y=0) for V BS =0? d) If the body ‐ to ‐ source voltage V BS is now changed to V BS = ‐ 2 V, with other bias conditions remaining the same, in what regime is the n ‐ MOSFET? e) If the body ‐ to ‐ source voltage V BS is now changed to V BS = ‐ 2 V, with other bias conditions remaining the same, what are the new values of Q Bmax (y=0)? f) How does Q y = + Q y = when V BS = ‐ 2 V compare to N ( ) B max ( ) ( = ) + Q ( y = ) when V BS =0 V? Q y N B max...
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  • Spring '08
  • CharlesSodini
  • Channel length modulation, Threshold voltage, bias conditions, Microelectronic Devices and Circuits, body‐to‐source voltage VBS

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