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Unformatted text preview: What is the carrier type of the silicon, n type or p type? b) What is the condition of the oxide / silicon interface when V GB = V? c) For what range of the V GB is the silicon surface in what is termed the depletion condition and is neither accumulated nor inverted? d) This capacitor is biased such that V GB V T = 1.5 V and the silicon / oxide surface is inverted. What is the sheet charge density in the inversion layer?...
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- Spring '08