MIT6_012s09_tutor04

MIT6_012s09_tutor04 - What is the carrier type of the...

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MIT OpenCourseWare http://ocw.mit.edu 6.012 Microelectronic Devices and Circuits Spring 2009 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms .
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6.012 Microelectronic Devices and Circuits Tutorial #4 Problem 1 Electrostatics of MOS structure You are given an MOS capacitor made on silicon, and you are told that its flatband voltage is +0.5V and its threshold voltage V T is +1.5 V. You are also told that the thickness of the gate insulator is t ox = 100 Angstrom with a relative dielectric constant of 3.9 a)
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Unformatted text preview: What is the carrier type of the silicon, n type or p type? b) What is the condition of the oxide / silicon interface when V GB = V? c) For what range of the V GB is the silicon surface in what is termed the depletion condition and is neither accumulated nor inverted? d) This capacitor is biased such that V GB V T = 1.5 V and the silicon / oxide surface is inverted. What is the sheet charge density in the inversion layer?...
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MIT6_012s09_tutor04 - What is the carrier type of the...

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