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MIT6_012s09_tutor02

# MIT6_012s09_tutor02 - drop is linearly distributed and the...

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MIT OpenCourseWare http://ocw.mit.edu 6.012 Microelectronic Devices and Circuits Spring 2009 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms .

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6.012 Microelectronic Devices and Circuits Tutorial #2 Problem 1 Drift Conduction Current generation integrated circuits process technologies for Microprocessors and Dynamic Random Access Memories (DRAM) have physical gate lengths of 23 nm (0.023 μ m). For this part of the problem assume that the active device cross sectional area is (0.023 μ m) 2 and the acceptor doping concentration of N a =4 ×10 18 cm 3 . a) Estimate the velocity of the holes in the channel if the voltage drop across the channel is 0.2 V. Assume the potential
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Unformatted text preview: drop is linearly distributed and the operating temperature is 300K. b) How long does it take the holes to travel across the channel? c) What is the hole current? Problem 2 ― Silicon Resistor and Sheet Resistance (based on P2.7) Figure P2.7 is a top view of a Si region which has metal electrical contacts on two sides, across which a voltage of 2V is applied. The Si layer is doped with 10 13 cm ‐ 3 As and is 2um thick. At 300K, a) What is the sheet resistance R Ñ ? b) What is the resistance R? c) Find the value of the electric field E x in the Si....
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• Spring '08
• CharlesSodini
• Electrical resistance, Microelectronic Devices and Circuits, Microelectronic Devices, MIT OpenCourseWare http://ocw.mit.edu, generation integrated circuits

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MIT6_012s09_tutor02 - drop is linearly distributed and the...

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