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MIT6_012s09_tutor01

# MIT6_012s09_tutor01 - 300K h What is the majority carrier...

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MIT OpenCourseWare http://ocw.mit.edu 6.012 Microelectronic Devices and Circuits Spring 2009 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms .

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6.012 Microelectronic Devices and Circuits Tutorial #1 Problem 1 Multiple dopants in Silicon A sample is doped with the following P 10 16 cm 3 . a) Estimate the electron and hole concentrations in equilibrium (n o & p o ) at room temperature (T=300K)? b) What is the majority carrier at 300K? c) What is the doping type at 300K? The above sample is then doped with an addition of Ge 10 16 cm 3 . d) Estimate the electron and hole concentrations in equilibrium (n o & p o ) at 300K? e) What is the majority carrier at 300K? f) What is the doping type at 300K? The above sample is then doped with an addition of B 10 18 cm 3 . g) Estimate the electron and hole concentrations in equilibrium (n o & p o ) at
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Unformatted text preview: 300K? h) What is the majority carrier at 300K? i) What is the doping type at 300K? Problem 2 ― Intrinsic Carrier Concentration Dependence on Temperature The intrinsic carrier concentration n i varies with temperature as n T = AT 3 2 exp ⎡ ⎢ − G ⎤ ⎥ i ( ) ⎣ 2 E kT ⎦ where A = 3.32 x 10 15 cm ‐ 3 /K 3/2 , k = 8.62 × 10 − 5 eV / K , T is the temperature in K, and E G is the bandgap in eV (for Si E G =1.1 eV). Assume that E G does not change with temperature and n i =1x10 10 cm ‐ 3 at 300 K. A sample is doped with P 10 14 cm ‐ 3 . At T=900K, is the sample intrinsic or extrinsic? Problem 3 ― Web lab demo...
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• Spring '08
• CharlesSodini
• intrinsic carrier concentration, majority carrier, Microelectronic Devices and Circuits, hole concentrations

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MIT6_012s09_tutor01 - 300K h What is the majority carrier...

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