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Unformatted text preview: regions of a forward biased p-n diode. For this diode, W p – x p = 4 μ m, W n – x n = 3 μ m, D n = 25 cm 2 /s and D p = 10 cm 2 /s. The area of the junction is 10 μ m 2 . a) What is the ratio of the doping levels across the junction: Na/Nd? b) Calculate the hole current injected into the n-side of the diode. c) Calculate the electron current injected into the p-side of the diode. d) Calculate the diffusion capacitance associated with the carrier storage on the n-side of the diode. e) Calculate the diffusion capacitance associated with the carrier storage on the p-side of the diode. f) How much should the voltage across the junction increase if we wish to double the total current through the diode? g) Compute the diffusion capacitance of the diode when we increase the voltage in the manner suggested in the previous question. Problem 3 Howe and Sodini P6.12...
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This note was uploaded on 09/24/2010 for the course EE 6.012 taught by Professor Charlessodini during the Spring '08 term at MIT.
- Spring '08