MIT6_012s09_pset01 - MIT OpenCourseWare

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: MIT OpenCourseWare 6.012 Microelectronic Devices and Circuits Spring 2009 For information about citing these materials or our Terms of Use, visit: . Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science 6.012 Microelectronic Devices and Circuits Homework #1 Problem 1 – Howe and Sodini P2.4 Problem 2 – Howe and Sodini P2.6 Problem 3 Consider a bar of silicon in thermal equilibrium. A plot of the potential vs. x is shown below. (It linearity falls from 0.42V at x = 0 to 0.24V at x = 6 μm) Assume that the reference for this potential φ = 0, when no = po = ni. φ 0.42 0.36 0.30 0.24 .018 1 2 3 4 5 6 X ( μm) a) Plot the electron and hole concentration vs. x from 0 ≤ x ≤ 6 μm. b) Plot the electric field vs. x. For parts c-d assume μn = 1000 cm2/V-sec c) Calculate the electron drift current density vs. x. d) Calculate the electron diffusion current density vs. x. Problem 4 – Howe and Sodini – P2.10a Problem 5 – Howe and Sodini – P2.11a ...
View Full Document

This note was uploaded on 09/24/2010 for the course EE 6.012 taught by Professor Charlessodini during the Spring '08 term at MIT.

Ask a homework question - tutors are online