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MIT6_012s09_pset01

MIT6_012s09_pset01 - MIT OpenCourseWare http/ocw.mit.edu...

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Unformatted text preview: MIT OpenCourseWare http://ocw.mit.edu 6.012 Microelectronic Devices and Circuits Spring 2009 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms . Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science 6.012 Microelectronic Devices and Circuits Homework #1 Problem 1 – Howe and Sodini P2.4 Problem 2 – Howe and Sodini P2.6 Problem 3 Consider a bar of silicon in thermal equilibrium. A plot of the potential vs. x is shown below. (It linearity falls from 0.42V at x = 0 to 0.24V at x = 6 μm) Assume that the reference for this potential φ = 0, when no = po = ni. φ 0.42 0.36 0.30 0.24 .018 1 2 3 4 5 6 X ( μm) a) Plot the electron and hole concentration vs. x from 0 ≤ x ≤ 6 μm. b) Plot the electric field vs. x. For parts c-d assume μn = 1000 cm2/V-sec c) Calculate the electron drift current density vs. x. d) Calculate the electron diffusion current density vs. x. Problem 4 – Howe and Sodini – P2.10a Problem 5 – Howe and Sodini – P2.11a ...
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